tm august 2007 FDC610PZ p-channel powertrench ? mosfet ?2007 fairchild semiconductor corporation FDC610PZ rev.b www.fairchildsemi.com 1 FDC610PZ p-channel powertrench ? mosfet ? 30v, ? 4.9a, 42m ? features ? max r ds(on) = 4 2 m ? at v gs = ?10v, i d = ?4.9a ? max r ds(on) = 7 5 m ? at v gs = ?4.5v, i d = ?3.7a ? low gate charge ( 17 nc typical). ? high performance trench technology for extremely low r ds(on). ? supersot tm ?6 package: small footprint (72% smaller than standard so?8) low profile (1mm thick). ? rohs compliant general description this p-channel mosfet is produced using fairchild semiconductor?s advanced powertrench ? process that has been especially tailored to minimi ze the on-state resistance and yet maintain low gate charge for superior switching performance. these devices are well suited for battery power applications: load switching and power management, battery charging circuits, and dc/dc conversion. application ? dc - dc conversion mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage ?30 v v gs gate to source voltage 25 v i d drain current -continuous (note 1a) ?4.9 a -pulsed ?20 p d power dissipation (note 1a) 1.6 w power dissipation (note 1b) 0.8 t j , t stg operating and storage junction temperature range ?55 to +150 c r ja thermal resistance, junction to ambient (note 1a) 78 c/w r ja thermal resistance, junction to ambient (note 1b) 156 device marking device package reel size tape width quantity .610z FDC610PZ ssot6 7?? 8mm 3000units supersot tm -6 pin 1 d s g d d d 3 5 6 4 1 2 3 d d d d s g
FDC610PZ p-channel powertrench ? mosfet FDC610PZ rev b www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = ?250 p a, v gs = 0v ?30 v ' bv dss ' t j breakdown voltage temperature coefficient i d = ?250 p a, referenced to 25 c ? 22 mv / c i dss zero gate voltage drain current v ds = ?24v, v gs = 0v ?1 p a i gss gate to source leakage current v gs = 25v, v ds = 0v 10 p a on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = ?250 p a ?1 ? 2.2 ?3 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = ?250 p a, referenced to 25 c 6 mv/ c r ds(on) static drain to source on resistance v gs = ?10v, i d = ?4.9a 36 42 m : v gs = ?4.5v, i d = ?3.7a 58 75 v gs = ?10v, i d = ?4.9a, t j = 125 c 50 60 g fs forward transconductance v dd = ?10v, i d = ?4.9a 15 s dynamic characteristics c iss input capacitance v ds = ?15v, v gs = 0v, f = 1mhz 755 1005 pf c oss output capacitance 145 195 pf c rss reverse transfer capacitance 125 190 pf r g gate resistance f = 1mhz 13 : switching characteristics t d(on) turn-on delay time v dd = ?15v, i d = ?4.9a v gs = ?10v, r gen = 6 : 7 14 ns t r rise time 4 10 ns t d(off) turn-off delay time 33 53 ns t f fall time 23 37 ns q g total gate charge v gs = 0v to ?10v v dd = ?15v, i d = ?4.9a 17 24 nc q g total gate charge v gs = 0v to ?4.5v 9 13 nc q gs gate to source gate charge 2.9 nc q gd gate to drain ?miller? charge 4.3 nc drain-source diod e characteristics i s maximum continuous drain-source diode forward current ?1.3 a v sd source to drain diode forward voltage v gs = 0v, i s = ?1.3a (note 2) ?0.8 ?1.2 v t rr reverse recovery time i f = ?4.9a, di/dt = 100a/ p s 19 35 ns q rr reverse recovery charge 9 18 nc notes: 1. r t ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ca is determined by the user's board design. 2. pulse test: pulse width < 30 0 p s, duty cycle < 2.0%. a. 78c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 156c/w when mounted on a minimum pad of 2 oz copper.
FDC610PZ p-channel powertrench ? mosfet FDC610PZ rev b www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. 01234 0 5 10 15 20 v gs = -5v v gs = -10v v gs = -4.5v pulse duration = 80 p s duty cycle = 0.5%max v gs = -4v v gs = -3.5v -i d , drain current (a) -v ds , drain to source voltage (v) on-region characteristics figure 2. 0 5 10 15 20 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v gs = -5v v gs = -3.5v pulse duration = 80 p s duty cycle = 0.5%max normalized drain to source on-resistance -i d , drain current(a) v gs = -4.5v v gs = -4v v gs = -10v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = -4.9a v gs = -10v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 345678910 0 50 100 150 200 pulse duration = 80 p s duty cycle = 0.5%max t j = 125 o c t j = 25 o c i d = -4.9a r ds(on) , drain to source on-resistance ( m : ) -v gs , gate to source voltage ( v ) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 12345 0 5 10 15 20 v dd = -5v pulse duration = 80 p s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 150 o c -i d , drain current (a) -v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 10 20 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0v -i s , reverse drain current (a) -v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDC610PZ p-channel powertrench ? mosfet FDC610PZ rev b www.fairchildsemi.com 4 figure 7. 048121620 0 2 4 6 8 10 i d = -4.9a v dd = -15v v dd = -10v -v gs , gate to source voltage(v) q g , gate charge(nc) v dd = -20v gate charge characteristics figure 8. 0.1 1 10 100 1000 30 f = 1mhz v gs = 0v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss 50 2000 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0 5 10 15 20 25 30 35 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 5 v ds = 0v t j = 25 o c t j = 150 o c -v gs , gate to source voltage (v) -i g , gate leakage current(ua) gate leakage current vs gate to source voltage figure 10. 0.1 1 10 100 0.01 0.1 1 10 100us dc 10s 1s 100ms 10ms 1ms -i d , drain current (a) -v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 156 o c/w t a = 25 o c 30 f o r w a r d b i a s s a f e operating area figure 11. single pulse maximum power di 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 1000 v gs = -10v single pulse r t ja = 156 o c/w t a = 25 o c p (pk) , peak transient power (w) t, pulse width (s) 0.5 ssipation typical characteristics t j = 25c unless otherwise noted
FDC610PZ p-channel powertrench ? mosfet FDC610PZ rev b www.fairchildsemi.com 5 figure 12. 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1e-3 0.01 0.1 1 single pulse r t ja = 156 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a transient thermal response curve typical characteristics t j = 25c unless otherwise noted
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